产品概述
描述
This N-channel Power MOSFET utilizes the 8th generation of STripFET™ technology with an enhanced trench gate structure for very low on-state resistance and gate charge, resulting in best in class conduction and switching performance.
-
所有功能
- Extremely low on-resistance RDS(on)
- Excellent figure of merit (FoM)
EDA符号、封装和3D模型
意法半导体 - STL35N3LH8
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
符号
封装
3D模型