产品概述
描述
This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class.
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所有功能
- Low gate charge
- Very low on-resistance
- High avalanche ruggedness
EDA符号、封装和3D模型
意法半导体 - STL180N4LLF6
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符号
封装
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