产品概述
描述
This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize on-resistance and gate charge to provide superior switching performance.
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所有功能
- Improved die-to-footprint ratio
- Very low profile package (1 mm max)
- Very low thermal resistance
- Low on-resistance
EDA符号、封装和3D模型
意法半导体 - STL10DN15F3
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符号
封装
3D模型