产品概述
描述
This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.
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所有功能
- Low gate charge
- Very low on-resistance
- High avalanche ruggedness
EDA符号、封装和3D模型
意法半导体 - STL100N6LF6
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符号
封装
3D模型