Product overview
描述
This device is a 12 V N-channel STripFET™V Power MOSFET which has been designed to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM).
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All features
- RDS(on)* Qgindustry benchmark
- Extremely low on-resistance RDS(on)
- Very low switching gate charge
- High avalanche ruggedness
- Low gate drive power losses
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STL100N1VH5
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