STI5N52U
Obsolete
Design Win
N-channel 525 V, 1.28 Ohm, 4.4 A, I2PAK UltraFASTmesh(TM) Power MOSFET

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Product overview

描述

This device is an N-channel Power MOSFET developed using UltraFASTmesh™ technology, which combines the advantages of reduced on-resistance, Zener gate protection and very high dv/dt capability with an enhanced fast body-drain recovery diode.

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STI5N52U

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