产品概述
描述
This device is an N-channel Power MOSFET developed using UltraFASTmesh™ technology, which combines the advantages of reduced on-resistance, Zener gate protection and very high dv/dt capability with an enhanced fast body-drain recovery diode.
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所有功能
- Outstanding dv/dt capability
- Gate charge minimized
- Very low intrinsic capacitances
- Very low RDS(on)
- Extremely low trr
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意法半导体提供全新的高压MDmesh M6和M9 STPOWER MOSFET，这些产品采用紧凑且散热效率高的TO-LL表面贴装型封装，可同时提供高的电气和热效率、外形紧凑和节省空间等特性，适用于SMPS、数据中心和太阳能微逆变器等电源转换应用。这些器件具有附加的Kelvin源引脚，可减小接通/关断开关损耗，有助于设计人员进一步提高效率。
EDA符号、封装和3D模型
意法半导体 - STI5N52U
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