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STI24NM65N

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Design Win

N-channel 650 V - 0.16 Y - 19 A - TO-220/FP - D2/I2PAK - TO-247 N-channel 650 V - 0.16 Y - 19 A - TO-220/FP - D2/I2PAK - TO-247

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产品概述

描述

This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

EDA符号、封装和3D模型

意法半导体 - STI24NM65N

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