产品概要
描述
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
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性能一览
- Worldwide best RDS(on) * area
- Higher VDSSrating and high dv/dt capability
- Excellent switching performance
- 100% avalanche tested
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STMicroelectronics - STI20N65M5
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