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STI14NM65N

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Design Win

N-channel 650 V - 0.33 Y - 12 A - TO-220/FP- D2/I2PAK - TO-247 second generation MDmesh™ Power MOSFET

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产品概述

描述

This series of devices is designed using the second generation of MDmesh™ Technology.

This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

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意法半导体 - STI14NM65N

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