产品概述
描述
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
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All features
- AEC-Q101 qualified
- Very low FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STH10N80K5-2AG
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3D models
所有资源
| Resource title | 版本 | Latest update | Actions | Details | 下載 |
|---|
SPICE models (2)
| Resource title | 版本 | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 1.0 | 04 Aug 2020 | 04 Aug 2020 | |||
| ZIP | 1.0 | 03 Aug 2020 | 03 Aug 2020 |
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| STH10N80K5-2AG | Active 产品已量产 | H2PAK-2 | Automotive | Ecopack1 | 10 | 2020-09-28T00:00:00.000+02:00 | |
STH10N80K5-2AG
Package:
H2PAK-2Material Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STH10N80K5-2AG | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
STH10N80K5-2AG Active