STGWT30HP65FB

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650 V、30 A高速沟槽栅场截止HB系列IGBT

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产品概述

描述

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

  • 所有功能

    • Maximum junction temperature: TJ = 175 °C
    • High speed switching series
    • Minimized tail current
    • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A
    • Tight parameter distribution
    • Safe paralleling
    • Positive VCE(sat) temperature coefficient
    • Low thermal resistance
    • Very fast soft recovery antiparallel diode

EDA符号、封装和3D模型

STMicroelectronics - STGWT30HP65FB

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