产品概述
描述
These IGBTs are developed using an advanced proprietary trench gate field-stop structure and performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching application.
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所有功能
- Designed for soft commutation only
- Maximum junction temperature: TJ= 175 °C
- Minimized tail current
- VCE(sat)= 2.0 V (typ.) @ IC= 15 A
- Tight parameters distribution
- Safe paralleling
- Very low VFsoft recovery co-packaged diode
- Low thermal resistance
- Lead free package
EDA符号、封装和3D模型
STMicroelectronics - STGWT20IH125DF
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符号
封装
3D模型
样片和购买
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| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||||
| STGWT20IH125DF | | | distributors 无法联系到经销商，请联系我们的销售办事处 | |||||||||||
STGWT20IH125DF 批量生产
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