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STGWA50IH65RF
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Reverse-conducting 650 V, 50 A, soft-switching IHR series IGBT in a TO-247 long leads package

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产品概要

描述

The new reverse-conducting IGBT 650 V has been developed using an advanced proprietary trench gate field-stop structure with monolithic integrated body diode, whose performances are optimized both in conduction and switching losses for soft commutation.

The result is a product specifically designed to maximize efficiency for any resonant and soft-switching applications.

  • 性能一览

    • Designed for soft-commutation only
    • Maximum junction temperature: TJ = 175 °C
    • VCE(sat) = 1.5 V (typ.) @ IC = 50 A
    • Minimized tail current
    • Tight parameter distribution
    • Low thermal resistance
    • Monolithic integrated diode
    • Positive VCE(sat) temperature coefficient
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STMicroelectronics - STGWA50IH65RF

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Quality and Reliability

Part Number Marketing Status General Description Package Grade 符合RoHS级别 Longevity Commitment Longevity Starting Date Material Declaration**
STGWA50IH65RF
Active
Reverse-conducting 650 V, 50 A, soft-switching IHR series IGBT in a TO-247 long leads package TO-247 long leads Industrial Ecopack2 10 -

STGWA50IH65RF

Package:

Reverse-conducting 650 V, 50 A, soft-switching IHR series IGBT in a TO-247 long leads package

Material Declaration**:

More Info

Marketing Status

Active

General Description

Reverse-conducting 650 V, 50 A, soft-switching IHR series IGBT in a TO-247 long leads package

Package

TO-247 long leads

Grade

Industrial

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。

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