产品概述
描述
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.
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所有功能
- AEC-Q101 qualified
- Maximum junction temperature: TJ = 175 °C
- 6 μs of minimum short circuit withstand time
- Low VCE(sat) = 1.7 V (typ.) @ IC = 30 A
- Tight parameter distribution
- Low thermal resistance
- Soft and very fast-recovery antiparallel diode
EDA符号、封装和3D模型
STMicroelectronics - STGWA30M65DF2AG
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符号
封装
3D模型
质量与可靠性
| 产品型号 | Marketing Status | 一般描述 | 包 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|---|
| STGWA30M65DF2AG | 批量生产 | Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT in a TO-247 long leads package | TO-247 long leads | 汽车应用 | Ecopack2 |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
样片和购买
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| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | 一般描述 | ||
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| 最小值 | 最大值 | ||||||||||||||
| STGWA30M65DF2AG | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
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STGWA30M65DF2AG 批量生产
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