产品概要
描述
该器件是采用先进的专有沟槽栅场截止结构开发的IGBT。该器件是M系列IGBT的一部分，代表了逆变器系统性能与效率之间的理想平衡，其中低损耗和短路功能至关重要。
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性能一览
- 符合AEC-Q101标准
- 最高结温：TJ = 175 °C
- 最短短路耐受时间为6 μs
- 低VCE(sat) = 1.7 V（典型值）@ IC = 30 A
- 参数分布紧凑
- 低热阻
- 超快软恢复反向并联二极管
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGWA30M65DF2AG
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Quality and Reliability
| Part Number | Marketing Status | General Description | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|---|
| STGWA30M65DF2AG | Active 产品已量产 | Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT in a TO-247 long leads package | TO-247 long leads | Automotive | Ecopack2 | 10 | 2020-07-01T00:00:00.000+02:00 | |
STGWA30M65DF2AG
Package:
Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT in a TO-247 long leads packageMaterial Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | General Description | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | ||||||||||||||
| STGWA30M65DF2AG | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
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STGWA30M65DF2AG Active
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