产品概要
描述
最新的HB2系列650 V IGBT代表了先进的专有沟槽栅极场截止结构的发展。得益于低电流值下更优的VCE(sat) 表现以及开关能量的降低，HB2系列的性能在导通方面得到了优化。仅用于保护目的的二极管与IGBT反并联共封装。因此，该产品专为各种快速应用而设计，能够最大化效率。
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性能一览
- 最高结温：TJ = 175 °C
- 低VCE(sat) = 1.65 V（典型值）@ IC = 30 A
- 共封装保护二极管
- 最小尾电流
- 参数分布紧密
- 低热阻
- 正VCE(sat) 温度系数
特别推荐
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGWA30HP65FB2
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| Resource title | 版本 | Latest update | Actions | Details | 下載 |
|---|
SPICE models (1)
| Resource title | 版本 | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 1.0 | 22 Nov 2019 | 22 Nov 2019 |
Quality and Reliability
| Part Number | Marketing Status | General Description | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|---|
| STGWA30HP65FB2 | Active 产品已量产 | Trench gate field-stop, 650 V, 30 A, high speed HB2 series IGBT in a TO-247 long leads package | TO-247 long leads | Industrial | Ecopack2 | 10 | 2024-06-04T00:00:00.000+02:00 |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | General Description | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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