STGWA20M65DF2
已停产
Design Win
沟槽栅场截止IGBT,M系列,650 V、20 A,低损耗

下载数据手册

产品概述

  • 所有功能

    • Maximum junction temperature: TJ = 175 °C
    • High short-circuit withstand time
    • VCE(sat) = 1.55 V (typ.) @ IC = 20 A
    • Tight parameters distribution
    • Low thermal resistance
    • Soft and very fast-recovery antiparallel diode

EDA符号、封装和3D模型

意法半导体 - STGWA20M65DF2

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

Please select one model supplier :

Symbols

符号

Footprints

封装

3D model

3D模型