STGWA20M65DF2
Obsolete
Design Win
沟槽栅场截止IGBT,M系列,650 V、20 A,低损耗

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产品概要

  • 性能一览

    • Maximum junction temperature: TJ = 175 °C
    • High short-circuit withstand time
    • VCE(sat) = 1.55 V (typ.) @ IC = 20 A
    • Tight parameters distribution
    • Low thermal resistance
    • Soft and very fast-recovery antiparallel diode

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STMicroelectronics - STGWA20M65DF2

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