产品概述
描述
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.
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所有功能
- 6 μs of minimum short-circuit withstand time
- Low VCE(sat) = 1.55 V (typ.) @ IC = 30 A
- Tight parameter distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast-recovery antiparallel diode
EDA符号、封装和3D模型
意法半导体 - STGW30M65DF2
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符号
封装
3D模型
所有资源
| 资源标题 | 版本 | 更新时间 | Actions | 細節 | 下載 |
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SPICE models (1)
| 资源标题 | 版本 | 更新时间 | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 1.0 | 30 May 2016 | 30 May 2016 |