产品概要
描述
This device is an IGBT developed using an advanced proprietary trench gate field‑stop structure. This device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
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性能一览
- Maximum junction temperature: TJ = 175 °C
- High speed switching
- Tight parameter distribution
- Safe paralleling
- Low thermal resistance
- Short-circuit rated
- Soft and fast recovery antiparallel diode
特别推荐
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGW20H60DF
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Quality and Reliability
| Part Number | Marketing Status | General Description | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|---|
| STGW20H60DF | Active 产品已量产 | Trench gate field-stop 600 V, 20 A high speed IGBT in a TO-247 package | TO-247 | Industrial | Ecopack2 | - | - |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | General Description | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | ||||||||||||||
| STGW20H60DF | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
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STGW20H60DF Active