产品概述
描述
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. This device represents an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
-
所有功能
- AEC-Q101 qualified
- VCE(sat) = 1.52 V (typ.) @ IC = 200 A
- Positive VCE(sat) temperature coefficient
- Tight parameter distribution
- Low thermal resistance
- Very fast and soft recovery antiparallel diode
EDA符号、封装和3D模型
STMicroelectronics - STGST200G65DFAG
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
符号
封装
3D模型
质量与可靠性
| 产品型号 | Marketing Status | 一般描述 | 包 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|---|
| STGST200G65DFAG | 批量生产 | Automotive-grade trench gate field-stop IGBT 650 V, 200 A in a STPAK package | STPAK | 汽车应用 | Ecopack2 | |
STGST200G65DFAG
Package:
Automotive-grade trench gate field-stop IGBT 650 V, 200 A in a STPAK packageMaterial Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
样片和购买
| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | 一般描述 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | ||||||||||||||
| STGST200G65DFAG | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
| |||||||||||
STGST200G65DFAG 批量生产