产品概要
描述
该器件是一款采用先进专有沟槽栅极场截止结构设计的IGBT。该器件是M系列IGBT的一部分，代表了逆变器系统性能与效率之间的理想平衡，其中低损耗和短路功能至关重要。此外，VCE(sat)正温度系数特性及紧密的参数分布，进一步提升了并联操作的安全性。
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性能一览
- 最短短路耐受时间为10 μs
- VCE(sat) = 1.85 V（典型值）@ IC = 8 A
- 参数分布紧密
- 正VCE(sat) 温度系数
- 低热阻
- 超快软恢复反向并联二极管
- 最高结温：TJ = 175 °C
特别推荐
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGP8M120DF3
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Quality and Reliability
| Part Number | Marketing Status | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| STGP8M120DF3 | Active 产品已量产 | TO-220 | Industrial | Ecopack2 | - | - |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||||
| STGP8M120DF3 | | | distributors 无法联系到经销商，请联系我们的销售办事处 | |||||||||||
STGP8M120DF3 Active
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