STGP30H65DFB2

批量生产
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Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a TO-220 package

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产品概述

描述

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.

  • 所有功能

    • Maximum junction temperature : TJ = 175 °C
    • Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
    • Very fast and soft recovery co-packaged diode
    • Minimized tail current
    • Tight parameter distribution
    • Low thermal resistance
    • Positive VCE(sat) temperature coefficient

EDA符号、封装和3D模型

STMicroelectronics - STGP30H65DFB2

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质量与可靠性

产品型号 Marketing Status 一般描述 等级规格 符合RoHS级别 材料声明**
STGP30H65DFB2
批量生产
Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a TO-220 package TO-220 工业 Ecopack2

STGP30H65DFB2

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Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a TO-220 package

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Marketing Status

批量生产

General Description

Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a TO-220 package

Package

TO-220

Grade

Industrial

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样片和购买

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STGP30H65DFB2
Available at distributors

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STGP30H65DFB2 批量生产

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STGP30H65DFB2

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Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a TO-220 package

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(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商