产品概述
描述
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
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所有功能
- High speed switching
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Short-circuit rated
- Ultrafast soft recovery antiparallel diode
特别推荐
EDA符号、封装和3D模型
意法半导体 - STGP15H60DF
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
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符号
封装
3D模型
质量与可靠性
| 产品型号 | Marketing Status | 一般描述 | 包 | 等级规格 | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | 材料声明** |
|---|---|---|---|---|---|---|---|---|
| STGP15H60DF | 批量生产 | Trench gate field-stop IGBT, H series 600 V, 15 A high speed | TO-220 | 工业 | Ecopack2 | - | - |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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样片和购买
| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | 一般描述 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | ||||||||||||||
| STGP15H60DF | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
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STGP15H60DF 批量生产