产品概要
描述
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
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性能一览
- Low on-voltage drop (VCE(sat))
- Very soft ultra fast recovery antiparallel diode
- Low CRES / CIES ratio (no cross-conduction susceptibility)
特别推荐
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGP10NC60HD
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Quality and Reliability
| Part Number | Marketing Status | General Description | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|---|
| STGP10NC60HD | Active 产品已量产 | 600 V, 10 A very fast IGBT | TO-220 | Industrial | Ecopack2 | - | - |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | General Description | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | ||||||||||||||
| STGP10NC60HD | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
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STGP10NC60HD Active
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