产品概述
描述
This IGBT utilizes the advanced Power MESH™ process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz).
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所有功能
- Low on-voltage drop (VCE(sat))
- High current capability
- Very soft ultra fast recovery antiparallel diode
特别推荐
EDA符号、封装和3D模型
意法半导体 - STGP10NB60SD
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符号
封装
3D模型