STGP10H60DF

批量生产
Design Win

600 V、10 A高速沟槽栅场截止H系列IGBT

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产品概述

描述

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

  • 所有功能

    • High speed switching
    • Tight parameters distribution
    • Safe paralleling
    • Low thermal resistance
    • Short-circuit rated
    • Ultrafast soft recovery antiparallel diode

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EDA符号、封装和3D模型

STMicroelectronics - STGP10H60DF

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质量与可靠性

产品型号 Marketing Status 一般描述 等级规格 符合RoHS级别 材料声明**
STGP10H60DF
批量生产
Trench gate field-stop IGBT, H series 600 V, 10 A high speed TO-220 工业 Ecopack2

STGP10H60DF

Package:

Trench gate field-stop IGBT, H series 600 V, 10 A high speed

Material Declaration**:

Marketing Status

批量生产

General Description

Trench gate field-stop IGBT, H series 600 V, 10 A high speed

Package

TO-220

Grade

Industrial

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STGP10H60DF
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STGP10H60DF 批量生产

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产品型号:

STGP10H60DF

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一般描述:

Trench gate field-stop IGBT, H series 600 V, 10 A high speed

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(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商