产品概述
描述
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
-
所有功能
- Very low on-voltage drop (VCE(sat))
- Minimum power losses at 5 kHz in hard switching
- Optimized performance for medium operating frequencies.
- IGBT co-packaged with Ultrafast freewheeling diode
EDA符号、封装和3D模型
意法半导体 - STGF19NC60SD
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
符号
封装
3D模型