产品概述
描述
This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition systems.
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所有功能
- Designed for automotive applications and AEC-Q101 qualified
- ESD gate-emitter protection
- Gate-collector high voltage clamping
- Logic level gate drive
- Low saturation voltage
- High pulsed current capability
- Gate and gate-emitter resistor
特别推荐
EDA符号、封装和3D模型
意法半导体 - STGD20N40LZ
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符号
封装
3D模型
所有资源
| 资源标题 | 版本 | 更新时间 |
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SPICE models (2)
| 资源标题 | 版本 | 更新时间 | |||
|---|---|---|---|---|---|
| ZIP | 1.0 | 01 Aug 2015 | 01 Aug 2015 | ||
| ZIP | 1.0 | 01 Aug 2015 | 01 Aug 2015 |