产品概要
描述
This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition systems.
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性能一览
- AEC-Q101 qualified
- 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH
- ESD gate-emitter protection
- Gate-collector high voltage clamping
- Logic level gate drive
- Low saturation voltage
- High pulsed current capability
- Gate and gate-emitter resistor
特别推荐
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGD19N40LZ
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所有资源
| Resource title | 版本 | Latest update | Actions | Details | 下載 |
|---|
SPICE models (1)
| Resource title | 版本 | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 1.0 | 13 Jan 2016 | 13 Jan 2016 |
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| STGD19N40LZ | Active 产品已量产 | DPAK | Automotive | Ecopack1 | 10 | 2025-03-20T00:00:00.000+01:00 | |
STGD19N40LZ
Package:
DPAKMaterial Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | PTOT (W) (max) | Eoff (mJ) (typ) (@ Tc=125°C) | ||
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| 最小值 | 最大值 | |||||||||||||||
| STGD19N40LZ | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
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STGD19N40LZ Active