产品概要
描述
This device utilizes the advanced PowerMESH™ process for the IGBT and the Turbo 2 Ultrafast high voltage technology for the diode. The combination results in a very good trade-off between conduction losses and switching behavior rendering the product ideal for diverse high voltage applications operating at high frequencies.
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性能一览
- Designed for automotive applications and AEC-Q101 qualified
- Low on-voltage drop (VCE(sat))
- Low Cres/ Cies ratio (no cross conduction susceptibility)
- Switching losses include diode recovery energy
- Short-circuit rated
- Very soft Ultrafast recovery anti-parallel diode
特别推荐
EDA Symbols, Footprints and 3D Models
所有资源
| Resource title | 版本 | Latest update | Actions | Details | 下載 |
|---|
SPICE models (1)
| Resource title | 版本 | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 1.0 | 01 Aug 2015 | 01 Aug 2015 |
Quality and Reliability
| Part Number | Marketing Status | General Description | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|---|
| STGD10HF60KD | Active 产品已量产 | Automotive-grade 10 A, 600 V short-circuit rugged IGBT with Ultrafast diode | DPAK | Automotive | Ecopack1 | - | - |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | General Description | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | ||||||||||||||
| STGD10HF60KD | | | distributors 无法联系到经销商,请联系我们的销售办事处 |
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STGD10HF60KD Active