产品概述
描述
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
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所有功能
- 6 µs of short-circuit withstand time
- VCE(sat) = 1.6 V (typ.) @ IC = 4 A
- Tight parameter distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
EDA符号、封装和3D模型
STMicroelectronics - STGB4M65DF2
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符号
封装
3D模型
所有资源
| 资源标题 | 版本 | 更新时间 |
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SPICE models (1)
| 资源标题 | 版本 | 更新时间 | ||
|---|---|---|---|---|
| ZIP | 1.0 | 22 Jul 2016 | 22 Jul 2016 |
质量与可靠性
| 产品型号 | Marketing Status | 一般描述 | 包 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|---|
| STGB4M65DF2 | 批量生产 | Trench gate field-stop IGBT, M series 650 V, 4 A low loss | D2PAK | 工业 | Ecopack2 | |
STGB4M65DF2
Package:
Trench gate field-stop IGBT, M series 650 V, 4 A low lossMaterial Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
样片和购买
| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | 一般描述 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | ||||||||||||||
| STGB4M65DF2 | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
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STGB4M65DF2 批量生产