产品概述
描述
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
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所有功能
- Maximum junction temperature : TJ = 175 °C
- Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
- Very fast and soft recovery co-packaged diode
- Minimized tail current
- Tight parameter distribution
- Low thermal resistance
- Positive VCE(sat) temperature coefficient
特别推荐
EDA符号、封装和3D模型
意法半导体 - STGB30H65DFB2
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符号
封装
3D模型
所有资源
| 资源标题 | 版本 | 更新时间 |
|---|
SPICE models (1)
| 资源标题 | 版本 | 更新时间 | ||
|---|---|---|---|---|
| ZIP | 1.0 | 22 Apr 2020 | 22 Apr 2020 |
质量与可靠性
| 产品型号 | Marketing Status | 一般描述 | 包 | 等级规格 | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | 材料声明** |
|---|---|---|---|---|---|---|---|---|
| STGB30H65DFB2 | 批量生产 | Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a D2PAK package | D2PAK | 工业 | Ecopack2 | - | - | |
STGB30H65DFB2
Package:
Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a D2PAK packageMaterial Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
样片和购买
| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | 一般描述 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | ||||||||||||||
| STGB30H65DFB2 | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
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STGB30H65DFB2 批量生产