产品概要
描述
意法半导体采用基于专利条带布局的前沿高电压技术设计出先进的IGBT系列，即具有卓越性能的PowerMESH IGBT。内置集电极-栅极齐纳二极管提供精确的有源钳位，而栅极-发射极齐纳二极管则提供ESD保护。
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性能一览
- 符合AEC-Q101标准
- ESD栅极-发射极保护
- 栅极-集电极高压钳位
- 逻辑电平栅极驱动
- 极低饱和电压
- 支持大电流
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGB20NB41LZT4
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
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Quality and Reliability
| Part Number | Marketing Status | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| STGB20NB41LZT4 | Active 产品已量产 | D2PAK | Automotive | Ecopack1 | 10 | 2020-07-01T00:00:00.000+02:00 |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating temperature (°C) | Operating Temperature (°C) (max) | PTOT (W) (max) | Eoff (mJ) (typ) (@ Tc=125°C) | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 最小值 | 最大值 | |||||||||||||||
| STGB20NB41LZT4 | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
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STGB20NB41LZT4 Active
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无法联系到经销商，请联系我们的销售办事处
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