该器件是采用先进的专有沟槽栅场截止结构开发的IGBT。该IGBT系列在传导和开关损耗之间实现了理想的平衡，最大限度地提升了甚高频转换器的效率。此外，VCE(sat)正温度系数和非常紧凑的参数分布使得并联操作更为简便。
STMicroelectronics - STGB20H60DF
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