STGB18N40LZT4
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汽车级390 V内部钳制IGBT ESCIS 180 mJ

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产品概要

描述

This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. The device show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required.

  • 性能一览

    • AEC-Q101 qualified
    • SCIS energy of 180 mJ @ TC = 150 °C, L = 3 mH
    • Parts are 100% tested in SCIS
    • ESD gate-emitter protection
    • Gate-collector high voltage clamping
    • Logic level gate drive
    • Very low saturation voltage
    • High pulsed current capability
    • Gate and gate-emitter resistor

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STMicroelectronics - STGB18N40LZT4

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Quality and Reliability

Part Number Marketing Status Package Grade 符合RoHS级别 Longevity Commitment Longevity Starting Date Material Declaration**
STGB18N40LZT4
Active
D2PAK Automotive Ecopack1 10 2020-07-01T00:00:00.000+02:00

STGB18N40LZT4

Package:

D2PAK

Material Declaration**:

Marketing Status

Active

Package

D2PAK

Grade

Automotive

RoHS Compliance Grade

Ecopack1

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

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STGB18N40LZT4

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STGB18N40LZT4

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PTOT (W) (max):

150

Eoff (mJ) (typ) (@ Tc=125°C):

-

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(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商