产品概要
描述
该系列器件为采用先进的PowerMESH技术开发的超高速IGBT。该工艺可保证在开关性能与低通态行为之间实现完美平衡。
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性能一览
- 较低的导通压降 (VCE(sat))
- 较低的Cres/Cies比率(无交叉导通易感性)
- 超快超软恢复反向并联二极管
该系列器件为采用先进的PowerMESH技术开发的超高速IGBT。该工艺可保证在开关性能与低通态行为之间实现完美平衡。
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