产品概述
描述
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
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所有功能
- Maximum junction temperature: TJ = 175 °C
- High speed switching series
- Minimized tail current
- Very low saturation voltage: VCE(sat) = 1.65 V (typ) @ IC = 60 A
- Safe paralleling
- Tight parameter distribution
EDA符号、封装和3D模型
意法半导体 - STG60H65FBD7
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符号
封装
3D模型
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样片和购买
| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STG60H65FBD7 | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
STG60H65FBD7 批量生产