Product overview
描述
该器件是一款采用先进专有沟槽栅极场截止结构设计的IGBT。该器件是M系列IGBT的一部分，代表了逆变器系统性能与效率之间的理想平衡，其中低损耗和短路功能至关重要。此外，正VCE(sat)温度系数特性和紧密的参数分布，使得并联操作更为安全。
-
All features
- 最高结温：TJ = 175 °C
- 短路耐受时间为10 μs
- 低VCE(sat) = 1.7 V（典型值）@ IC = 50 A
- 参数分布紧密
- 正VCE(sat)温度系数
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STG50M120F3D7
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
Symbols
Footprints
3D models