Product overview
描述
This die is an IGBT developed using an advanced proprietary trench gate and field-stop structure. This device is a part of the H2 series IGBTs.
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All features
- 5 μs of short-circuit withstand time
- Low VCE(sat)= 2.1 V (typ.) at IC = 25 A
- Tight parameter distribution
- Low switching-off losses
- Safer paralleling
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STMicroelectronics - STG25H120F2D7
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