产品概要
描述
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability.
It uses a Cellular Emitter structure to enhance switching speeds.
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性能一览
- Fully characterized at 125 ˚C
- Very high switching speed
- In compliance with the 2002/93/EC European Directive
- Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range
- Integrated free-wheeling diode
- High voltage capability
- Minimum lot-to-lot spread for reliable operation
- Large RBSOA
- Low spread of dynamic parameters
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STB13007DT4
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Quality and Reliability
| Part Number | Marketing Status | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| STB13007DT4 | Active 产品已量产 | D2PAK | Industrial | Ecopack2 | - | - |
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STB13007DT4 | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
STB13007DT4 Active
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