产品概述
描述
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability.
It uses a Cellular Emitter structure to enhance switching speeds.
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所有功能
- Fully characterized at 125 ˚C
- Very high switching speed
- In compliance with the 2002/93/EC European Directive
- Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range
- Integrated free-wheeling diode
- High voltage capability
- Minimum lot-to-lot spread for reliable operation
- Large RBSOA
- Low spread of dynamic parameters
EDA符号、封装和3D模型
意法半导体 - STB13007DT4
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符号
封装
3D模型
样片和购买
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| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STB13007DT4 | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
STB13007DT4 批量生产
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distributors
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包:
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