产品概述
描述
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.
It uses a Cellular Emitter structure to enhance switching speeds.
-
所有功能
- FULLY CHARACTERIZED AT 125 °C
- VERY HIGH SWITCHING SPEED
- FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING
- IMPROVED SPECIFICATION:
LOWER LEAKAGE CURRENT TIGHTER GAIN RANGE DC CURRENT GAIN PRESELECTION TIGHTER STORAGE TIME RANGE - INTEGRATED FREE-WHEELING DIODE
- HIGH VOLTAGE CAPABILITY
- MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
- LARGE RBSOA
- LOW SPREAD OF DYNAMIC PARAMETERS
EDA符号、封装和3D模型
意法半导体 - ST13007DFP
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
符号
封装
3D模型