产品概要
描述
The SGT1D5R10MEA is a 100 V, 474 A e-mode PowerGaN transistor. The resulting device provides extremely low conduction losses, high current capability and ultra-fast switching operation to enable high power density and unbeatable efficiency performances.
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All features
- Enhancement mode normally off transistor
- Very high switching speed
- High power management capability
- Extremely low capacitances
- Zero reverse recovery charge
EDA Symbols, Footprints and 3D Models
STMicroelectronics - SGT1D5R10MEA
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Quality and Reliability
| Part Number | Marketing Status | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| SGT1D5R10MEA | Preview 产品尚在设计阶段 | EN-FCLGA 5X6 | Industrial | N/A | - | - | |
SGT1D5R10MEA
Package:
EN-FCLGA 5X6Material Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SGT1D5R10MEA | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
SGT1D5R10MEA Preview