产品概要
描述
该碳化硅功率MOSFET器件采用意法半导体先进且创新的第二代碳化硅 (SiC) MOSFET技术开发而成。该器件单位面积导通电阻极低且具有良好的开关性能。开关损耗的变化几乎与结温无关。
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性能一览
- 稳定的超快速本体二极管
- 极低的栅极电荷和输入电容
- 非常高的额定工作结温 (TJ = 200 °C)
EDA Symbols, Footprints and 3D Models
STMicroelectronics - SCTWA70N120G2V
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3D models
所有资源
| Resource title | 版本 | Latest update | Actions | Details | 下載 |
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SPICE models (1)
| Resource title | 版本 | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 1.0 | 18 Nov 2022 | 18 Nov 2022 |