Product overview
描述
该碳化硅功率MOSFET器件采用意法半导体先进的第二代SiC MOSFET创新技术开发而成。该器件单位面积导通电阻极低且具有良好的开关性能。开关损耗的变化几乎与结温无关。
-
All features
- 符合AEC-Q101标准
- 稳定的超快速本体二极管
- 极低的栅极电荷和输入电容
- 非常高的额定工作结温 (TJ = 200 °C)
EDA Symbols, Footprints and 3D Models
STMicroelectronics - SCTWA60N120G2AG
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
Symbols
Footprints
3D models
所有资源
| Resource title | 版本 | Latest update | Actions | Details | 下載 |
|---|
SPICE models (1)
| Resource title | 版本 | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 1.0 | 16 Jun 2021 | 16 Jun 2021 |