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SCTWA30N120
Obsolete
Design Win
碳化硅功率MOSFET 1200 V、80 mΩ（典型值）、45 A，采用HiP247长引脚封装

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产品概要

描述

该碳化硅功率MOSFET利用宽禁带半导体材料的先进创新特性制造而成。实现单位面积无可比拟的低导通电阻以及几乎不受温度影响的优异开关性能。碳化硅（SiC）材料具有出色的热性能，使设计人员能够采用符合行业标准的设计，显著提高器件的散热能力。这些特性使该器件非常适合高效率和高功率密度应用。

EDA Symbols, Footprints and 3D Models

STMicroelectronics - SCTWA30N120

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