SCTW60N120G2AG

批量生产
Design Win

Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247 package

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产品概述

描述

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

  • 所有功能

    • AEC-Q101 qualified
    • High speed switching performance
    • Very fast and robust intrinsic body diode
    • Low capacitances
    • Very high operating junction temperature capability (TJ = 200 °C)

EDA符号、封装和3D模型

STMicroelectronics - SCTW60N120G2AG

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质量与可靠性

产品型号 Marketing Status 等级规格 符合RoHS级别 材料声明**
SCTW60N120G2AG
批量生产
HIP247 汽车应用 Ecopack2

SCTW60N120G2AG

Package:

HIP247

Material Declaration**:

Marketing Status

批量生产

Package

HIP247

Grade

Automotive

RoHS Compliance Grade

Ecopack2

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

样片和购买

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SCTW60N120G2AG
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SCTW60N120G2AG 批量生产

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产品型号:

SCTW60N120G2AG

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(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商