产品概述
描述
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
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所有功能
- AEC-Q101 qualified
- High speed switching performance
- Very fast and robust intrinsic body diode
- Low capacitances
- Very high operating junction temperature capability (TJ = 200 °C)
EDA符号、封装和3D模型
意法半导体 - SCTW60N120G2AG
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符号
封装
3D模型
所有资源
| 资源标题 | 版本 | 更新时间 | Actions | 細節 | 下載 |
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SPICE models (1)
| 资源标题 | 版本 | 更新时间 | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 1.0 | 22 May 2020 | 22 May 2020 |