产品概述
描述
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
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所有功能
- AEC-Q101 qualified
- Very fast and robust intrinsic body diode
- Low capacitance
特别推荐
EDA符号、封装和3D模型
STMicroelectronics - SCTW35N65G2VAG
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符号
封装
3D模型
质量与可靠性
| 产品型号 | Marketing Status | 包 | 等级规格 | 符合RoHS级别 | 材料声明** |
|---|---|---|---|---|---|
| SCTW35N65G2VAG | 批量生产 | HIP247 | 汽车应用 | Ecopack2 | |
SCTW35N65G2VAG
Package:
HIP247Material Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
样片和购买
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| 产品型号 | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | 包 | 包装类型 | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SCTW35N65G2VAG | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
SCTW35N65G2VAG 批量生产
Budgetary Price (US$)*/Qty:
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distributors
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包:
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