产品概要
描述
该碳化硅功率MOSFET晶体管采用ST先进、创新的第二代碳化硅（SiC）MOSFET技术开发而成。器件具有每区域超低的导通状态电阻和卓越的开关性能。RDS(on) 和开关损耗的变化受工作结温的影响都非常小。
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性能一览
- 专为汽车应用而设计
- 导通电阻随温度变化敏感温度
- 稳定的超快速本体二极管
- 适应非常高的工作温度 (TJ = 200 °C)
- 低电容
EDA Symbols, Footprints and 3D Models
STMicroelectronics - SCTW100N65G2AG
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
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Symbols
Footprints
3D models
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | 符合RoHS级别 | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| SCTW100N65G2AG | NRND 不推荐用于新设计。量产仅供支持现有生产。 | HIP247 | Automotive | Ecopack2 | - | - | |
SCTW100N65G2AG
Package:
HIP247Material Declaration**:
(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此，它们可能不是100%适用于特定的设备。有关特定设备的信息，请联系 销售支持。
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Sample & Buy
| Part Number | 供货状态 | Budgetary Price (US$)*/Qty | 从ST订购 | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SCTW100N65G2AG | | | distributors 无法联系到经销商，请联系我们的销售办事处 |
SCTW100N65G2AG NRND
Budgetary Price (US$)*/Qty:
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distributors
无法联系到经销商，请联系我们的销售办事处
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