产品概要
描述
该碳化硅功率MOSFET晶体管采用ST先进、创新的第二代碳化硅（SiC）MOSFET技术开发而成。器件具有每区域超低的导通状态电阻和卓越的开关性能。RDS(on) 和开关损耗的变化受工作结温的影响都非常小。
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性能一览
- 专为汽车应用而设计
- 导通电阻随温度变化敏感温度
- 稳定的超快速本体二极管
- 适应非常高的工作温度 (TJ = 200 °C)
- 低电容
EDA Symbols, Footprints and 3D Models
STMicroelectronics - SCTW100N65G2AG
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