SCTH70N120G2V-7
Obsolete
Design Win
Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 90 A in an H2PAK-7 package

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Product overview

描述

该碳化硅功率MOSFET晶体管采用ST先进、创新的第二代碳化硅(SiC)MOSFET技术开发而成。该器件单位面积导通电阻极低且具有良好的开关性能。开关损耗的变化几乎与结温无关。

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STMicroelectronics - SCTH70N120G2V-7

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