产品概述
描述
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
-
所有功能
- AEC-Q101 qualified
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitance
- Source sensing pin for increased efficiency
EDA符号、封装和3D模型
意法半导体 - SCTH40N120G2V7AG
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
符号
封装
3D模型
所有资源
| 资源标题 | 版本 | 更新时间 | Actions | 細節 | 下載 |
|---|
SPICE models (1)
| 资源标题 | 版本 | 更新时间 | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 1.0 | 31 Mar 2022 | 31 Mar 2022 |