SCTH40N120G2V7AG

批量生产
Design Win

汽车级碳化硅功率MOSFET,1200 V、33 A、75 mOhm(典型值,TJ = 25 C),H2PAK-7封装

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产品概述

描述

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

  • 所有功能

    • AEC-Q101 qualified
    • Very fast and robust intrinsic body diode
    • Extremely low gate charge and input capacitance
    • Source sensing pin for increased efficiency

EDA符号、封装和3D模型

STMicroelectronics - SCTH40N120G2V7AG

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质量与可靠性

产品型号 Marketing Status 等级规格 符合RoHS级别 材料声明**
SCTH40N120G2V7AG
批量生产
H2PAK-7 汽车应用 Ecopack1

SCTH40N120G2V7AG

Package:

H2PAK-7

Material Declaration**:

Marketing Status

批量生产

Package

H2PAK-7

Grade

Automotive

RoHS Compliance Grade

Ecopack1

(**) st.com上提供的材料声明表单可能是基于包装系列中最常用的封装的通用文档。因此,它们可能不是100%适用于特定的设备。有关特定设备的信息,请联系 销售支持

样片和购买

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SCTH40N120G2V7AG
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SCTH40N120G2V7AG 批量生产

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产品型号:

SCTH40N120G2V7AG

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(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商